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전체 논문

28

1

Excellent Reliability Characteristics of Ovonic Threshold Switch Device with Higher-Temperature Forming Technique
Jangseop Lee, Sanghyun Ban, Yoori Seo, Dongmin Kim, Hyunsang Hwang
Physica Status Solidi - Rapid Research Letters, 202311

2

Vacuum gap atomic switch with improved controllability of quantized conduction states and low transition energy
Sunhyeong Lee, Seungwoo Lee, Hyunsang Hwang
AIP Advances, 202302

3

Cell Design Considerations for Ovonic Threshold Switch-Based 3-D Cross-Point Array
Sanghyun Ban, Jangseop Lee, Taehoon Kim, Hyunsang Hwang
IEEE Transactions on Electron Devices, 202303

4

Optimized Programming Scheme Enabling Linear Potentiation in Filamentary HfO2 RRAM Synapse for Neuromorphic Systems.
J. Woo et al.
IEEE Transactions on Electron Devices, 2016

5

Effects of Ti buffer layer on retention and electrical characteristics of Cu-based conductive-bridge random access memory (CBRAM).
B. Attarimashalkoubeh et al.
ECS Solid State Letters, 2014

6

High density neuromorphic system with Mo/Pr0.7Ca0.3MnO3 synapse and NbO2 IMT oscillator neuron.
K. Moon et al.
2015 IEEE International Electron Devices Meeting (IEDM), 2015

7

Nanoscale (∼ 10nm) 3D vertical ReRAM and NbO2 threshold selector with TiN electrode.
E. Cha et al.
Electron Devices Meeting (IEDM), 2013 IEEE International., 2013

8

Te-based amorphous binary OTS device with excellent selector characteristics for X-point memory applications.
Y. Koo et al.
VLSI Technology, 2016 IEEE Symposium on., 2016

9

Threshold selector with high selectivity and steep slope for cross-point memory array.
J. Song et al.
IEEE Electron Device Letters, 2015

10

Volatile threshold switching devices for hardware security primitives: Exploiting intrinsic variability as an entropy source
Wooseok Choi, Ohhyuk Kwon, Jangseop Lee, Seungyeol Oh, Seongjae Heo, Sanghyun Ban, Yoori Seo, Dongmin Kim, Hyunsang Hwang
Applied Physics Reviews, 202406