Effect of p-GaN hole concentration on the stabilization and performance of a graphene current spreading layer in near-ultraviolet light-emitting diodes
Jung‐Hong Min, Tae Hoon Seo, Sang‐Bae Choi, Ki-Young Kim, Jun Yeob Lee, Mun‐Do Park, Myung Jong Kim, Eun‐Kyung Suh, Jong-Ryeol Kim, Dong‐Seon Lee