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191
Metalorganic chemical vapor deposition of InGaAs-GaAs-AlGaAs strained layer quantum well lasers
김종렬
J. Cryst. Growth., 1991
192
Characteristics of step graded separate confinement quantum well lasers with direct and indirect barriers
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J. Appl. Phys., 1990
193
Characteristics of step graded seperateconfinement quantum well lasers with direct and indirect barriers
김종렬
J. Appl. Phys., 1990
194
Strained layer AlGaAs-GaAs-InGaAs real space transffered electron devices
김종렬
Electronic lett., 1990
195
Characterization of InGaAs-GaAs strained layer lasers with quantum wells near the critical thickness
김종렬
Appl. Phys. Lett., 1989
196
Ethyldimethylindium for the growth of InGaAs-GaAs strained layer lasers by metalorganic chemical vapor deposition
김종렬
Appl. Phys. Lett., 1989
197
Ethyldimethylindium for the growth of InGaAs-GaAs strained layer by metalorganicchemical vapor deposition
김종렬
Appl. Phys. Lett., 1989
198
Charicterization of InGaAs-GaAs strainedlayer lasers with quantum wells near thecritical thickness
김종렬
Appl. Phys. Lett., 1989
199
급냉응고된 Al-Cr 합금의 Zr의 영향
김종렬
한국금속학회지, 1987
200
Powder characteristics of Fe2O3 nanopowder agglomerates fabricated by high energy ball milling at various speed and spray-drying processes
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JOURNAL OF CERAMIC PROCESSING RESEARCH, 2018
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