The evolution of display technologies is rapidly transitioning from traditional screens to advanced augmented reality (AR)/virtual reality (VR) and wearable devices, where quantum dots (QDs) serve as crucial pure-color emitters. While solution processing efficiently forms QD solids, challenges emerge in subsequent stages, such as layer deposition, etching, and solvent immersion. These issues become especially pronounced when developing diverse form factors, necessitating innovative patterning methods that are both reversible and sustainable. Herein, a novel approach utilizing lipoic acid (LA) as a ligand is presented, featuring a carboxylic acid group for QD surface attachment and a reversible disulfide ring structure. Upon i-line UV exposure, the LA ligand initiates ring-opening polymerization (ROP), crosslinking the QDs and enhances their solvent resistance. This method enables precise full-color QD patterns with feature sizes as small as 3 µm and pixel densities exceeding 3788 ppi. Additionally, it supports the fabrication of stretchable QD composites using LA-derived monomers. The reversible ROP process allows for flexibility, self-healing, and QD recovery, promoting sustainability and expanding QD applications for ultra-fine patterning and on-silicon displays.

Contrary to the prevailing notion that shell structures arise from the intricate chemistry and surface defects of InP quantum dots (QDs), an innovative strategy that remarkably enhances the luminescence efficiency of core-only InP QDs to over 90% is introduced. This paradigm shift is achieved through the concurrent utilization of group 2 and 3 metal-derived ligands, providing an effective remedy for surface defects and facilitating charge recombination. Specifically, a combination of Zn carboxylate and Ga chloride is employed to address the undercoordination issues associated with In and P atoms, leading to the alleviation of in-gap trap states. The intricate interplay and proportional ratio between Ga- and Zn-containing ligands play pivotal roles in attaining record-high luminescence efficiency in core-only InP QDs, as successfully demonstrated across various sizes and color emissions. Moreover, the fabrication of electroluminescent devices relying solely on InP core emission opens a new direction in optoelectronics, demonstrating the potential of the approach not only in optoelectronic applications but also in catalysis or energy conversion by charge transfer.