A fully transparent quantum dot light-emitting diode (QD-LED) was fabricated by incorporating two types (anode and cathode) of graphene-based electrodes, which were controlled in their work functions and sheet resistances. Either gold nanoparticles or silver nanowires were inserted between layers of graphene to control the work function, whereas the sheet resistance was determined by the number of graphene layers. The inserted gold nanoparticles or silver nanowires in graphene films caused a charge transfer and changed the work function to 4.9 and 4.3 eV, respectively, from the original work function (4.5 eV) of pristine graphene. Moreover the sheet resistance values for the anode and cathode electrodes were improved from ∼63,000 to ∼110 Ω/sq and from ∼100,000 to ∼741 Ω/sq as the number of graphene layers increased from 1 to 12 and from 1 to 8, respectively. The main peak wavelength, luminance, current efficiency, and optical transmittance of the fully transparent QD-LED integrated with graphene anode and cathode were 535 nm, ∼358 cd/m2, ∼0.45 cd/A, and 70-80%, respectively. The findings of the study are expected to lay a foundation for the production of high-efficiency, fully transparent, and flexible displays using graphene-based electrodes.

Although oxide nanowires offer advantages for next-generation transparent display applications, they are also one of the most challenging materials for this purpose. Exposure of semiconducting channel areas of oxide nanowire transistors produces an undesirable increase in the photocurrent, which may result in unstable device operation. In this study, we have developed a Zn(2)SnO(4) nanowire transistor that operates stably regardless of changes in the external illumination. In particular, after exposure to a light source of 2100 lx, the threshold voltage (V(th)) showed a negative shift of less than 0.4 V, and the subthreshold slope (SS) changed by ∼0.1 V/dec. ZnO or SnO(2) nanowire transistors, in contrast, showed 1.5-2.0 V negative shift in V(th) and an SS change of ∼0.3 V/dec under the same conditions. Furthermore, the Zn(2)SnO(4) nanowire transistors returned to their initial state immediately after the light source was turned off, unlike those using the other two nanowires. Thus, Zn(2)SnO(4) nanowires achieve photostability without the application of a black material or additional processing, minimizing the photocurrent effect for display devices.

Semiconductor nanowires have achieved great attention for integration in next-generation electronics. However, for nanowires with diameters comparable to the Debye length, which would generally be required for one-dimensional operation, surface states degrade the device performance and increase the low-frequency noise. In this study, single In(2)O(3) nanowire transistors were fabricated and characterized before and after surface passivation with a self-assembled monolayer of 1-octadecanethiol (ODT). Electrical characterization of the transistors shows that device performance can be enhanced upon ODT passivation, exhibiting steep subthreshold slope (~64 mV/dec), near zero threshold voltage (~0.6 V), high mobility (~624 cm(2)/V·s), and high on-currents (~40 μA). X-ray photoelectron spectroscopy studies of the ODT-passivated nanowires indicate that the molecules are bound to In(2)O(3) nanowires through the thiol linkages. Device simulations using a rectangular geometry to represent the nanowire indicate that the improvement in subthreshold slope and positive shift in threshold voltage can be explained in terms of reduced interface trap density and changes in fixed charge density. Flicker (low-frequency, 1/f) noise measurements show that the noise amplitude is reduced following passivation. The interface trap density before and after ODT passivation is profiled throughout the band gap energy using the subthreshold current-voltage characteristics and is compared to the values extracted from the low-frequency noise measurements. The results indicate that self-assembled monolayer passivation is a promising optimization technology for the realization of low-power, low-noise, and fast-switching applications such as logic, memory, and display circuitry.

Fully transparent thin-film transistors (TFTs) based on well-aligned single-walled carbon nanotube (SWCNT) arrays with indium tin oxide (ITO) electrodes are achieved. The fully transparent SWCNT-TFTs could be attractive candidates for future flexible or transparent electronics.

A fully transparent quantum dot light-emitting diode (QD-LED) was fabricated by incorporating two types (anode and cathode) of graphene-based electrodes, which were controlled in their work functions and sheet resistances. Either gold nanoparticles or silver nanowires were inserted between layers of graphene to control the work function, whereas the sheet resistance was determined by the number of graphene layers. The inserted gold nanoparticles or silver nanowires in graphene films caused a charge transfer and changed the work function to 4.9 and 4.3 eV, respectively, from the original work function (4.5 eV) of pristine graphene. Moreover the sheet resistance values for the anode and cathode electrodes were improved from ∼63,000 to ∼110 Ω/sq and from ∼100,000 to ∼741 Ω/sq as the number of graphene layers increased from 1 to 12 and from 1 to 8, respectively. The main peak wavelength, luminance, current efficiency, and optical transmittance of the fully transparent QD-LED integrated with graphene anode and cathode were 535 nm, ∼358 cd/m2, ∼0.45 cd/A, and 70-80%, respectively. The findings of the study are expected to lay a foundation for the production of high-efficiency, fully transparent, and flexible displays using graphene-based electrodes.

Although oxide nanowires offer advantages for next-generation transparent display applications, they are also one of the most challenging materials for this purpose. Exposure of semiconducting channel areas of oxide nanowire transistors produces an undesirable increase in the photocurrent, which may result in unstable device operation. In this study, we have developed a Zn(2)SnO(4) nanowire transistor that operates stably regardless of changes in the external illumination. In particular, after exposure to a light source of 2100 lx, the threshold voltage (V(th)) showed a negative shift of less than 0.4 V, and the subthreshold slope (SS) changed by ∼0.1 V/dec. ZnO or SnO(2) nanowire transistors, in contrast, showed 1.5-2.0 V negative shift in V(th) and an SS change of ∼0.3 V/dec under the same conditions. Furthermore, the Zn(2)SnO(4) nanowire transistors returned to their initial state immediately after the light source was turned off, unlike those using the other two nanowires. Thus, Zn(2)SnO(4) nanowires achieve photostability without the application of a black material or additional processing, minimizing the photocurrent effect for display devices.

Semiconductor nanowires have achieved great attention for integration in next-generation electronics. However, for nanowires with diameters comparable to the Debye length, which would generally be required for one-dimensional operation, surface states degrade the device performance and increase the low-frequency noise. In this study, single In(2)O(3) nanowire transistors were fabricated and characterized before and after surface passivation with a self-assembled monolayer of 1-octadecanethiol (ODT). Electrical characterization of the transistors shows that device performance can be enhanced upon ODT passivation, exhibiting steep subthreshold slope (~64 mV/dec), near zero threshold voltage (~0.6 V), high mobility (~624 cm(2)/V·s), and high on-currents (~40 μA). X-ray photoelectron spectroscopy studies of the ODT-passivated nanowires indicate that the molecules are bound to In(2)O(3) nanowires through the thiol linkages. Device simulations using a rectangular geometry to represent the nanowire indicate that the improvement in subthreshold slope and positive shift in threshold voltage can be explained in terms of reduced interface trap density and changes in fixed charge density. Flicker (low-frequency, 1/f) noise measurements show that the noise amplitude is reduced following passivation. The interface trap density before and after ODT passivation is profiled throughout the band gap energy using the subthreshold current-voltage characteristics and is compared to the values extracted from the low-frequency noise measurements. The results indicate that self-assembled monolayer passivation is a promising optimization technology for the realization of low-power, low-noise, and fast-switching applications such as logic, memory, and display circuitry.

Fully transparent thin-film transistors (TFTs) based on well-aligned single-walled carbon nanotube (SWCNT) arrays with indium tin oxide (ITO) electrodes are achieved. The fully transparent SWCNT-TFTs could be attractive candidates for future flexible or transparent electronics.

This study analyzes a reusable, washable air filter with a nanoNet structure fabricated by methods such as plasma treatment and low-temp heat fusion. The filter's durability is tested through repeated washing cycles.

As modern electronic devices become smaller and more highly integrated, stable thermal management is emerging as a key development approach, including in applications considering mechanical deformation. In this study, a flexible heat-dissipating sheet was developed using composites of insulating graphene (I-Gr), plate-like boron nitride (BN-P), and aggregated spherical BN (BN-A) based on a high-elasticity styrene-(ethylene-butylene)-styrene (SEBS) elastomer. The unique asymmetric two-dimensional layered structure of I-Gr and BN improved the heat transfer properties of the composite by maintaining the continuity of the heat-conducting network despite tensile deformation. In addition, the spherical shape and disordered structure of the aggregated BN-A promoted the formation of an extended heat-conducting path and enhanced the bonding between the fillers. At the optimal composition, the composite maintained an initial thermal conductivity (TC) of 2.0 W m^-1 K^-1 or higher, and the TC reduction (ΔTC) was less than 8% and 10% at 50% and 100% elongation, respectively, demonstrating excellent TC stability. In addition, owing to the interfacial affinity and network reinforcing effect of I-Gr, the TC performance and structural stability were maintained even after 500 cycles of 50% tensile strain and 400% elongation. In contrast, the CNT-based composite showed limitations such as low initial TC, large ΔTC, and low elongation. This study presents a design strategy for a heat-dissipating material with high elasticity, high TC, and excellent durability, offering considerable potential for use in next-generation flexible electronic devices such as wearable electronics, freeform displays, and soft robotics.

<b>Background:</b> To repurpose carbutamide (CBT), a discontinued sulfonylurea-class anti-diabetic drug, as an anti-inflammatory bowel disease (IBD) drug, CBT azo-linked with salicylic acid (CAA) was designed and synthesized as a colon-specific prodrug to co-release CBT and mesalazine (5-ASA) selectively in the large intestine. <b>Methods:</b> CAA exhibited reduced lipophilicity and decreased transintestinal transport compared to CBT, as shown in an ex vivo experiment using isolated rat jejunal segments. It also underwent cleavage into CBT and 5-ASA when incubated with cecal contents of rats. Additionally, oral administration of CAA and Sulfasalazine (SSZ), a colon-specific prodrug of 5-ASA currently used for IBD treatment, resulted in similar levels of 5-ASA accumulation in the rat cecal region. <b>Results:</b> In a dinitrobenzene sulfonic acid-triggered colitis model in rats, CAA produced a more pronounced improvement in colon injury and inflammation than SSZ. Furthermore, rectal co-administration of CBT and 5-ASA conferred enhanced protective outcomes compared to monotherapy with either agent alone, suggesting a combined anticolitic action. The two drugs also jointly suppressed valacyclovir uptake via peptide transporter 1 (PepT1) in the distal colon, supporting PepT1 as a target contributing to their combined anticolitic effect. Unlike CBT, which significantly reduced blood glucose following oral administration, equimolar administration of CAA did not alter glycemic levels, consistent with reduced systemic exposure to CBT. <b>Conclusions:</b> In conclusion, CAA functions as a colon-specific mutual prodrug that surpasses SSZ in anticolitic performance while minimizing hypoglycemia risk, thus facilitating the repurposing of CBT as a treatment for IBD.

Light-irradiation-based color-conversion displays are considered an emerging technology with considerable potential because they are easy to fabricate; however, color precision is limited by inefficient heating and uneven temperature distribution, and pattern extinction is delayed by poor heat dissipation. This study proposes a light-irradiation-based color-conversion display that can produce full color from a near-infrared (NIR) laser using carbon nanotubes (CNTs) with efficient photothermal conversion and heat-diffusion functions. Light-irradiation-based color-conversion displays have a more straightforward structure than conventional electronic-circuit-based displays. The proposed design uses an NIR laser as the driving energy source, which makes it highly efficient. In addition, a color-conversion layer based on a thermochromic liquid crystal (TLC) changes the color to red, green, or blue depending on the temperature, and a CNT-based thermal property control layer, which reacts to NIR photothermally, is used to achieve immediate thermal control. These layers can be applied to a flexible substrate to maintain stable performance, even under bending or deformation. Precisely controlling the laser power can help achieve a subtle temperature change of 27-32 °C and generate a corresponding color change in a specific area of the TLC-based color-conversion layer. Considering rapid and reversible color conversion is achievable by turning the NIR laser on and off, this method is suitable for various applications, such as high-speed responsive displays, smart sensors, and customizable visual information systems.