발행물
컨퍼런스
IEDM 2017
2017
,
First-principles based quantum transport simulations of nanoscale field effect transistors
IWCN
First-principles based simulations of Si ultra-thin-body FETs with SiO2 gate dielectric
ICCP
2015
Multi-scale approach for roughness effects of Si-SiO2 nanowire interface on electronic transport
ISPSA
2014
Quantum simulations of silicon nanowire field effect transistors: surface roughness and strain effects
Effects of strain for nanowire schottky barrier p-MOSFETs