Effects of repetitive polarization switching on the coercive voltage of Pt/Pb(Zr0.52Ti0.48 )O-3/Pt thin films analyzed using impedance spectroscopy
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CURRENT APPLIED PHYSICS, 2019
12
Switching dynamics and modeling of multi-domain Zr-Doped HfO2 ferroelectric thin films
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CURRENT APPLIED PHYSICS, 2019
13
Effects of Pb content and electrode materials on the ferroelectric properties of Pb(Zr0.52Ti0.48)O-3 thin films
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JOURNAL OF ALLOYS AND COMPOUNDS, 2019
14
Negative capacitance phenomena depending on the wake-up effect in the ferroelectric Si:HfO2 film
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CURRENT APPLIED PHYSICS, 2019
15
Phase transition phenomenon: A compound measure analysis
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PHYSICA A-STATISTICAL MECHANICS AND ITS APPLICATIONS, 2015
16
Effects of NH3 flow rate on the epitaxial growth of CoSi2 thin film using a CoN (x) interlayer deposited by MOCVD
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APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING, 2015
17
Effects of the fluctuation in a singly-connected conducting filament structure on the distribution of the reset parameters in unipolar resistance switching
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APPLIED PHYSICS LETTERS, 2015
18
Phase-shifting behaviour revisited: An alternative measure
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PHYSICA A-STATISTICAL MECHANICS AND ITS APPLICATIONS, 2014
19
Mechanism of the reset process in bipolar-resistance-switching Ta/TaOx/Pt capacitors based on observation of the capacitance and resistance
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APPLIED PHYSICS LETTERS, 2014
20
Dynamic switching mechanism of conduction/set process in Cu/a-Si/Si memristive device