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Thickness dependence of electrical properties in Pb(Zr0.4Ti0.6)O3 by pulsed laser deposition

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Enhanced nonlinearity factor in ferroelectric tunnel junction memory

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이산화 티타늄 나노튜브를 통한 해수 배터리 효율 상승

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Free standing membrane paper as a nonvolatile memory device with high flexibility and mechanical strength for large area flexible electronic applications

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Effect of the barrier thickness and oxygen vacancy in ferroelectric tunnel junction memory device