Aziridine-functionalized mesoporous silica membranes on polymeric hollow fibers: synthesis and single-component CO2 and N2 permeation properties
H.-J. Kim, W. Chaikittisilp, K.-S. Jang, S. A. Didas, J. R. Johnson, W. J. Korors, S. Nair,*, C. W. Jones,*
Ind. Eng. Chem. Res., 2015
72
Poly(imide-benzoxazole) gate insulators with high thermal resistance for solution-processed flexible indium-zinc oxide thin-film transistors
D. Wee,†, S. Yoo,†, Y. H. Kang, Y. H. Kim, J.-W. Ka,*, S. Y. Cho, C. Lee, J. Ryu, M. H. Yi, K.-S. Jang,*
J. Mater. Chem. C, 2014
73
Low-temperature-annealed alumina/polyimide gate insulators for solution-processed ZnO thin-film transistors
S. Yoo, J.-Y. Yoon, J. Ryu, Y. H. Kim, J.-W. Ka, M. H. Yi, K.-S. Jang,*
Appl. Surf. Sci., 2014
74
A high-temperature resistant polyimide gate insulator surface-modified with a YOx interlayer for high-performance, solution-processed Li-doped ZnO thin-film transistors
J.-Y. Yoon, Y. H. Kim, J.-W. Ka, S. K. Hong, M. H. Yi,*, K.-S. Jang,*
S. J. Kim, A. Kim, Y. Jo, J.-Y. Yoon, S. S. Lee, Y. Choi, J. C. Won, S. Nahm, K.-S. Jang,*, Y. H. Kim,*, S. Jeong,*
J. Mater. Chem. C, 2014
76
Silylated mesoporous silica membranes on polymeric hollow fiber supports: synthesis and permeation properties
H.-J. Kim, N. A. Brunelli, A. J. Brown, K.-S. Jang, W.-g. Kim, F. Rashidi, J. R. Johnson, W. J. Koros, C. W. Jones,*, S. Nair,*
ACS Appl. Mater. Interfaces, 2014
77
Photo-patternable polyimide gate insulator with fluorine groups for improving performance of 2,7-didecyl[1]benzothieno[3,2-b][1]benzothiopene (C10-BTBT) thin-film transistors
J.-M. Won, H. J. Suk, D. Wee, Y. H. Kim, J.-W. Ka, J. Kim, T. Ahn, M. H. Yi, K.-S. Jang,*
Org. Electron., 2013
78
Enhanced performance of solution-processed organic thin-film transistors with a low-temperature-annealed alumina interlayer between the polyimide gate insulator and the semiconductor
J.-Y. Yoon, S. Jeong, S. S. Lee, Y. H. Kim, J.-W. Ka, M. H. Yi,*, K.-S. Jang,*
ACS Appl. Mater. Interfaces, 2013
79
Surface modification of a polyimide gate insulator with an yttrium oxide interlayer for aqueous-solution-processed ZnO thin-film transistors
K.-S. Jang,*, D. Wee, Y. H. Kim, J. Kim, T. Ahn, J.-W. Ka,*, M. H. Yi
Langmuir, 2013
80
Surface modification of polyimide gate insulators for solution-processed 2,7-didecyl[1]benzothieno-[3,2-b][1]benzothiophene (C10-BTBT) thin-film transistors
K.-S. Jang,*, W. S. Kim, J.-M. Won, Y.-H. Kim, S. Myung, J.-W. Ka, J. Kim, T. Ahn, M. H. Yi,*