Read Disturbances in Cross-Point Phase-Change Memory Arrays- Part I: Physical Modeling With Phase-Change Dynamics
Kim Changwook, Ban Sanghyun, Hong Eunryeong, Jang Jun Tae, Kim Dae Hwan, Kim Donguk, Kim Hyun Wook, Lee Hanwool, Lee Hyung Dong, Mo Hyun-Sun, Shin Minchul, Woo Jiyong
Kim Donguk, Jang Jun Tae, Kim Changwook, Kim Hyun Wook, Hong Eunryeong, Ban Sanghyun, Shin Minchul, Lee Hanwool, Lee Hyung Dong, Mo Hyun-Sun, Woo Jiyong, Kim Dae Hwan
IEEE TRANSACTIONS ON ELECTRON DEVICES, 202212
23
Effect of Positive Bias Stress on the Back-Gate voltage-Modulated Threshold voltage in Double-Gate Amorphous InGaZnO Thin-Film Transistors
Park Jingyu, Park Shinyoung, Jang Jun Tae, Choi Sung-Jin, Kim Dong Myong, Bae Jong-Ho, Shin Hong Jae, Jeong Yun Sik, Bae Jong Uk, Oh Chang Ho, Kim Changwook, Kim Dae Hwan
IEEE ELECTRON DEVICE LETTERS, 202211
24
Analysis of Drain-Induced Barrier Lowering in InGaZnO Thin-Film Transistors
Yang Tae Jun, Kim Je-Hyuk, Ryoo Chang Il, Myoung Seung Joo, Kim Changwook, Baeck Ju Heyuck, Bae Jong-Uk, Noh Jiyong, Lee Seok-Woo, Park Kwon-Shik, Kim Jeom-Jae, Yoon Soo-Young, Kim Yoon, Kim Dae Hwan
IEEE TRANSACTIONS ON ELECTRON DEVICES, 202211
25
Fowler-Nordheim Stress-Induced Degradation of Buried-Channel-Array Transistors in DRAM Cell for Cryogenic Memory Applications
Choi Sungju, Yang Ga Won, Lee Sangwon, Park Jingyu, Kim Changwook, Park Jun, Choi Hyun-Seok, Lee Namhyun, Kim Gang-Jun, Kim Yoon, Kang Myounggon, Kim Changhyun, Bae Jong-Ho, Kim Dae Hwan
IEEE TRANSACTIONS ON ELECTRON DEVICES, 202211
26
Development of PAR Sensor Applicable to Greenhouses and Smart Farms Using a Ripple-Free Red/Blue TiO2/SiO2 Dual-Band Bandpass Filter
Eo Yun Jae, Kim Seohyeon, Oh Ji Hye, Lee Keyong Nam, Kim Changwook, Lee Seung Min, Do Young Rag
ACS Applied Electronic Materials, 202211
27
Physics-Based Compact Model of Current Stress-Induced Threshold Voltage Shift in Top-Gate Self-Aligned Amorphous InGaZnO Thin-Film Transistors
Yang Tae Jun, Park Jingyu, Choi Sungju, Kim Changwook, Han Moonsup, Bae Jong-Ho, Choi Sung-Jin, Kim Dong Myong, Shin Hong Jae, Jeong Yun Sik, Bae Jong Uk, Oh Chang Ho, Park Dong-Wook, Kim Dae Hwan
IEEE ELECTRON DEVICE LETTERS, 202210
28
Effect of Post-Annealing on Barrier Modulations in Pd/IGZO/SiO2/p(+)-Si Memristors
Kim Donguk, Lee Hee Jun, Yang Tae Jun, Choi Woo Sik, Kim Changwook, Choi Sung-Jin, Bae Jong-Ho, Kim Dong Myong, Kim Sungjun, Kim Dae Hwan
Nanomaterials, 202210
29
Compact SPICE Model of Memristor with Barrier Modulated Considering Short- and Long-Term Memory Characteristics by IGZO Oxygen Content
Kim Donguk, Lee Hee Jun, Yang Tae Jun, Choi Woo Sik, Kim Changwook, Choi Sung-Jin, Bae Jong-Ho, Kim Dong Myong, Kim Sungjun, Kim Dae Hwan
Nanoscale Advances, 202209
30
Surface Modification of ZrO2 Nanoparticles with TEOS to Prepare Transparent ZrO2@SiO2-PDMS Nanocomposite Films with Adjustable Refractive Indices