The development of stretchable and transparent electrodes is essential for next-generation wearable displays, human-machine interfaces, and on-skin bioelectronic devices; however, conventional approaches are limited by low fabrication compatibility with conventional semiconducting manufacturing processes, unstable electrical conductivity under stretching, and limited non-uniform areal transparency. Here, we report a novel device fabrication strategy for developing a highly transparent, intrinsically stretchable, photo-patternable, and vacuum-deposited (T-iSPV) electrode. The strain-insensitive performance of the T-iSPV is inherent in the <i>in situ</i> formation of a conducting bilayer consisting of a crack-based Au nanomembrane and Au-elastomer nanocomposite during direct thermal deposition of Au onto an elastic substrate. In addition, a photo-patterning process and optimal thickness/design and evaporation rate of the Au bilayer delicately balance the stretchability, electrical conductivity, and transparency of the T-iSPV. To demonstrate its versatility, the T-iSPV is applied as a conformal bioelectronic interfacing electrode for monitoring electrocardiogram (ECG), electromyogram (EMG), and electrooculogram (EOG) signals. Furthermore, the T-iSPV electrochemically activates the stretchable active layers composed of poly-3-hexylthiophene (P3HT) in a styrene-ethylene-butylene-styrene (SEBS) polymer matrix to effectively modulate electrochromic displays. These findings underscore the potential of the T-iSPV for enabling the evolution of next-generation conformal bioelectronic and optoelectronic systems.

In this paper, Hot Carrier Degradation (HCD/HCI) characterization results measured on Low V<inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">T</inf> N-channel Metal Oxide Semiconductor Field Effect Transistors (NMOSFETs) used in Dynamic Random Access Memory (DRAM) for mobile and automotive applications are presented. Dependence of HCD on Gate Voltage Stress (V<inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">GSTR</inf>), Drain Voltage Stress (V<inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">DSTR</inf>), and Stress Temperature (T) are investigated and analyzed. Degradation mechanisms at various conditions are proposed based on the experimental signature of the measured data. Parametric degradation at end-of-life (EOL) is predicted with conventional exponential V<inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">DSTR</inf> model and benchmarked against an augmented V<inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">DSTR</inf> dependence model that is calibrated across wide range of data.

The influence of electrode surface structure on behavior of plasma in high-power electron beam diode was investigated using a high-speed intensified sCMOS camera. In high-power electron beam cathodes, explosive electron emission (EEE) is typically utilized to generate electron beams, where plasma formation is essential. Plasma in high-power diodes serves as an electron source but also contributes to gap closure, making its behavior critical to understand. This study compared planar and groove-type cathodes, revealing that although the difference in the field enhancement factor between these two cathode surfaces was 2.3-fold, the difference in the threshold electric field for EEE was lower than expected. This discrepancy was attributed to ion bombardment on the cathode surface, primarily caused by ions generated near the anode edge. Since these ions were predominantly produced at the anode edge, where the field enhancement factor was high, plasma formation was also localized on the corresponding regions of the cathode surface. The localized plasma formation led to concentrated power consumption and expansion, ultimately resulting in gap closure. In contrast, groove cathodes exhibited uniform plasma expansion without gap closure, suggesting that grooves can enhance diode performance by promoting uniform plasma formation.

Surface flashover degrades insulation performance in high-voltage systems, making its control a critical requirement. Therefore, we have developed a device capable of conducting flashover experiments in vacuum as part of efforts to enhance insulator performance. This experimental setup is designed to perform time-resolved imaging of flashover process using an ICCD camera. The developed device features a rotatable electrode-insulator assembly, enabling the transition from conventional 2D imaging to 3D imaging. Temporal imaging will capture key moments, including the initiation of voltage drop, the point of maximum voltage, and post-discharge phenomena. For voltage measurements, a Capacitance Voltage Divider (CVD) is attached to the chamber wall near the electrode, ensuring accurate measurement of the voltage. Current measurements will utilize a Rogowski groove capable of covering tens of MHz of bandwidth, ensuring future expandability. Based on the results obtained in this study, we anticipate elucidating the multipactor process in terms of voltage and current perspectives coupled with imaging. These are expected to contribute to the development of multipactor suppression methods for controlling flashover in high-voltage applications.

We confirmed the X-ray emission characteristics using an X-ray tube that generates soft X-rays by emitting a 5keV electron beam from a carbon nanotube emitter (CNT). In the low-energy region below 5keV, the X-ray emission yield is primarily attributed to bremsstrahlung than characteristic x-ray, and we established Geant4 monte-carlo simulations and cold cathode field emission experiments to verify this phenomenon. Furthermore, based on the electron beam data, we experimentally confirmed that the emission yield reaches its maximum at an optimal thickness, as theoretically predicted based on the anode's X-ray self-shielding effect or the range of the electron beam in the anode.

Abstract Advancement of transparent electronics is limited by the lack of stable wide‐bandgap p ‐type semiconductors. Although copper iodide (CuI) shows potential in transparent p ‐type thin‐film transistors (TFTs), controlling carrier concentration and chemical stability remains challenging. Here, it is demonstrated that cadmium (Cd) doping effectively suppresses hole concentration and enhances the air stability of CuI thin films. The incorporation of chemically soft Cd 2 ⁺ ions improve environmental robustness, enabling conventional photolithography under ambient conditions. Optimized 4.0% Cd‐doped CuI TFT exhibits a saturation mobility of 5.58 ± 0.71 cm 2 V −1 s −1 , an I on /I off ratio of 10 7 , and improved negative bias stability (ΔV th = 1.9 V at 2 MV cm −1 for 3600 s). Furthermore, a 7‐stage ring oscillator using CuI:Cd film patterned via standard photolithography in air exhibits an operating frequency of 138.38 kHz with a propagation delay of 7.66 µs at a β‐ratio of 5:1, highlighting its potential for industrial application of transparent electronics.