발행물
컨퍼런스
32th Korean Conference on Semiconductors
2014
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High-Density 2T0C DRAM Utilizing Vertical Gate-All-Around (GAA) IGZO FETs for Improved Performance
Application to Leaky Integrate and Firing Model Using Ovonic Threshold Compact Model
Design and Performance Evaluation of CFET-Based SRAM
Application of Physical-Based Ferroelectric Field-Effect Transistor Design to In-Memory Computing
Physical-Based Modeling of Ferroelectric Capacitor for FeRAM Application