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전체 논문

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21

Dual-Phase All-Inorganic Cesium Halide Perovskites for Conducting-Bridge Memory-Based Artificial Synapses
김선길, Quyet Van Le, 장호원, 김상범, 김수영, 한지수, 김효정, 최민주, 이솔아, 김태민
ADVANCED FUNCTIONAL MATERIALS, 201912

22

On-Chip Trainable 1.4M 6T2R PCM Synaptic Array with 1.6K Stochastic LIF Neurons for Spiking RBM
김상범, Masatoshi Ishii
IEEE International Electron Devices Meeting (IEDM), 201912

23

Phase-change memory cycling endurance
김상범, Burr, GW, Kim, W, Nam, SW
MRS BULLETIN, 201909

24

Self-Healing of a Confined Phase Change Memory Device with a Metallic Surfactant Layer
Xie, YJ, 김상범, Kim, W, Kim, Y, Gonsalves, J, BrightSky, M, Lam, C, Zhu, Y, Cha, JJ, Cha, JJ
ADVANCED MATERIALS, 201801

25

Tutorial: Brain-inspired computing using phase-change memory devices
Sebastian, A, 김상범, Le Gallo, M, Burr, GW, BrightSky, M, Eleftheriou, E, Eleftheriou, E
JOURNAL OF APPLIED PHYSICS, 201801

26

A Resistance Drift Compensation Scheme to Reduce MLC PCM Raw BER by Over 100x for Storage Class Memory Applications
김상범, Khwa, WS, Chang, MF, Wu, JY, Lee, MH, Su, TH, Yang, KH, Chen, TF, Wang, TY, Li, HP, Brightsky, M, Lung, HL, Lam, C
IEEE JOURNAL OF SOLID-STATE CIRCUITS, 201701

27

Neuromorphic computing using non-volatile memory
G. Burr, 김상범, R. Shelby, A. Sebastian, S. Kim, S. Sidler, K. Virwani, M. Ishii, P. Narayanan, A. Fumarola, L. Sanches, I. Boybat, M. Le Gallo, 문기봉, J. Woo, H. Hwang
Advances in Physics: X, 201701

28

Training a Probabilistic Graphical Model With Resistive Switching Electronic Synapses
김상범, Eryilmaz, SB, Neftci, E, Joshi, S, BrightSky, M, Lung, HL, Lam, C, Cauwenberghs, G, Wong, HSP
IEEE TRANSACTIONS ON ELECTRON DEVICES, 201612

29

A Retention-Aware Multilevel Cell Phase Change Memory Program Evaluation Metric
김상범, Khwa, WS, Chang, MF, Wu, JY, Lee, MH, Su, TH, Wang, TY, Li, HP, BrightSky, M, Lung, HL, Lam, C
IEEE ELECTRON DEVICE LETTERS, 201611

30

A Phase Change Memory Cell With Metal Nitride Liner as a Resistance Stabilizer to Reduce Read Current Noise for MLC Optimization
김상범, Sosa, N, BrightSky, M, Mori, D, Kim, WK, Zhu, Y, Suu, KK, Lam, C
IEEE TRANSACTIONS ON ELECTRON DEVICES, 201610