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EMERGING MATERIALS, DEVICES & SYSTEM (EMDS) LAB

성균관대학교 본교(제1캠퍼스) 신소재공학부

윤정호 교수

Neuromorphic Computing

Memristive Devices

Ferroelectric Transistors

발행물

전체 논문

69

31

Nociceptive Memristor
Yumin Kim, Young Jae Kwon, Dae Eun Kwon, Kyung Jean Yoon, Jung Ho Yoon, Sijung Yoo, Hae Jin Kim, Tae Hyung Park, Jin-Woo Han, Kyung Min Kim, Cheol Seong Hwang
Adv. Mater., 2018

32

Truly Electroforming‐Free and Low‐Energy Memristors with Preconditioned Conductive Tunneling Paths
Jung Ho Yoon, Jiaming Zhang, Xiaochen Ren, Zhongrui Wang, Lincoln J. Lauhon, Zhiyong Li, Qiangfei Xia, J. Joshua Yang
Adv. Funct. Mater., 2017

33

Current Limit and Self-Rectification Functionalities in the TiO2/HfO2 Resistive Switching Material System
Jung Ho Yoon, Dae Eun Kwon, Yumin Kim, Young Jae Kwon, Kyung Jean Yoon, Tae Hyung Park, Xing Long Shao, Cheol Seong Hwang
Nanoscale, 2017

34

Double-Layer-Stacked One Diode-One Resistive Switching Memory Crossbar Array with an Extremely High Rectification Ratio of 109
Kyung Jean Yoon, Gun Hwan Kim, Sijung Yoo, Woorham Bae, Jung Ho Yoon, Tae Hyung Park, Dae Eun Kwon, Yeong Jae Kwon, Hae Jin Kim, Yu Min Kim, Cheol Seong Hwang
Adv. Elect. Mater., 2017

35

Ning Ge, Jung Ho Yoon, Miao Hu, EJ Merced-Grafals, Noraica Davila, John Paul Strachan, Zhiyong Li, Helen Holder, Qiangfei Xia, R Stanley
,

36

An efficient analog Hamming distance comparator realized with a unipolar memristor array: a showcase of physical computing
Ning Ge, Jung Ho Yoon, Miao Hu, EJ Merced-Grafals, Noraica Davila, John Paul Strachan, Zhiyong Li, Helen Holder, Qiangfei Xia, R Stanley Williams, Xing Zhou, J Joshua Yang
Sci. Rep., 2017

37

Comparison of the atomic layer deposition of tantalum oxide thin films using Ta (NtBu)(NEt2)3 and Ta (NtBu)(NEt2)2Cp and H2O
Seul Ji Song, Taehyung Park, Kyung Jean Yoon, Jung Ho Yoon, Dae Eun Kwon, Wontae Noh, Clement Lansalot-Matras, Satoko Gatineau, Han-Koo Lee, Sanjeev Gautam, Deok-Yong Cho, Sang Woon Lee, Cheol Seong Hwang
ACS AMI, 2017

38

Uniform Self-rectifying Resistive Switching Behavior via Preformed Conducting Paths in a Vertical-type Ta2O5/HfO2–x Structure with a Sub-μm2 Cell Area
Jung Ho Yoon, Sijung Yoo, Seul Ji Song, Kyung Jean Yoon, Dae Eun Kwon, Young Jae Kwon, Tae Hyung Park, Hye Jin Kim, Xing Long Shao, Yumin Kim, Cheol Seong Hwang
ACS AMI, 2016

39

A study of the transition between the non-polar and bipolar resistance switching mechanisms in the TiN/TiO2/Al memory
Xing Long Shao, Kyung Min Kim, Kyung Jean Yoon, Seul Ji Song, Jung Ho Yoon, Hae Jin Kim, Tae Hyung Park, Dae Eun Kwon, Young Jae Kwon, Yu Min Kim, Xi Wen Hu, Jin Shi Zhao, Cheol Seong Hwang
Nanoscale, 2016

40

Bias-polarity-dependent resistance switching in W/SiO2/Pt and W/SiO2/Si/Pt structures
Hao Jiang, Xiang Yuan Li, Ran Chen, Xing Long Shao, Jung Ho Yoon, Xiwen Hu, Cheol Seong Hwang, Jinshi Zhao
Sci. Rep., 2016