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Thermal Analysis of GaN-Based HFET Devices using the unit thermal profile analysis

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Photoelectrochemical Etching Process of 6H-SiC Wafers Using HF-based Solution

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Reactive Ion Etching Process of 4H-SiC Using the CHF3/O2 mixture with a Post O2

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The DC and RF characteristics of AlGaN/GaN HFET using RuO2/Au gate for high power and high temperature application

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Contact characteristics of AlGaN/GaN HFET for high power and high temperature operation