발행물
컨퍼런스
NRL
,
DC and Large-signal RF Performance of Recessed gate GaN MESFETs fabricated by the photoelectrochemical etching process
Adhesion and Microstructure of Ni Contacts to 3C-SiC
한국반도체 학술대회
1000 V급 4H-SiC Schottky Barrier Diode의 특성
한국재료학회
Fabrication of 4H-SiC Schottky Barrier Diodes with High Breakdown Voltages
Fabrication of GaN MESFET Using the Photoelectrochemical Etching Process