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121
Photoelectrochemical etching Process of 6H-SiC Wafer Using HF-based solution and H2O2 Solutions as Electrolytes
신무환
Materials Science Forum, 200203
122
Thermal analysis of GaN-based HFET Devices Using the Unit Thermal Profile Approach
신무환
Materials Science Forum, 200203
123
Reactive Ion Etching Process of 4H-SiC Using the CHF3/O2 Mixtures and a Post-O2 Plasma Etching Process
신무환
Materials Sciecne Forum, 200203
124
Photoelectrochemical etching Process of 6H-SiC Wafers Using HF-based solution and H2O2 Solutions as Electrolytes
신무환
Materials Science Forum, 200203
125
Thermal analysis of GaN-based HFET Devices Using the Unit Thermal Profile Approch
신무환
Trans Tech Publication, 200203
126
Photo-electrochemical gate recess etching for the fabrication of AlGaN/GaN heterostructure field effect transistor
신무환
Jpn.J.Appl.Phyc., 200203
127
Influence of Pin-hole-type defects in AlGaN on rf performance of AlGaN/GaN HFETs grown by MOCVD
신무환
Phys. stat. sol(a), 200203
128
DC and RF Characteristic of AlGaN/GaN HFET Using RUO2-based Gate for High Power and High Temperature Application
신무환
Journal of Korean Physical Society, 200111
129
Optimization of Ti/Al/Pt/Au Ohmic Contact and RUO2 based Schottky Contact in AlGaN/GaN HFET for High Power and High Temperature Operation
신무환
Journal of Korean Physical Society, 200111
130
Synthesis of cabazole-containing PPV and its application to the electroluminescent devices
신무환
Materials Science and EngineeringB, 200108
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