발행물
컨퍼런스
International Technical Conference on Circuits/Systems, Computers and Communications
2012.07
,
Investigation of gate stacked array (GSTAR) for 3D NAND flash memory,
Investigation of read and program disturbance caused by programmed adjacent cell in NAND flash memory array,
E-MRS 2009 Spring Meeting
2012.06
Study of Tunneling Oxides Fabricated by Different Processes and Their Effects on Memory Characteristics of SONOS Capacitors
Silicon Nanoelectronics Workshop
Investigation into the effect of the variation of gate dimensions on program characteristics in 3D NAND flash array,
Asia-Pacific Workshop on Fundamentals and Applications of Advanced Semiconductor Devieces
Control effect of new optimized structure of planar thin floating gate (FG) NAND flash to fringing field,