발행물
컨퍼런스
하계종합학술대회
2012.06
,
가상 Source/Drain을 갖는 NAND 플래시 메모리에서 gate length 변동에 의한 문턱 전압 및 On-cell 전류 변동을 완화시키는 방법에 관한 연구,
Korean Conference on Semiconductors
2012.02
Erase Speed Enhancement by Using SiGe Drain in 3D Stacked NAND Flash Memory,
Layer Selection by Multi Level Operation (LSM) of String Select Line in 3D Stacked NAND Flash Memory,
International Conference on Electronics, Information and Communication
Investigation of Poly Depletion Effect in 3D stacked NAND flash memory,
Variation of Threshold Voltage and ON Current Caused by Gate Length and Nanowire Diameter Fluctuation in Junctionless 3D NAND Flash Memory,