발행물

전체 논문

73

51

Direct measurement of the Fermi energy in graphene using a double-layer heterostructure
Seyoung Kim, Insun Jo, DC Dillen, DA Ferrer, B Fallahazad, Z Yao, Sanjay K Banerjee, Emanuel Tutuc
Physical review letters, 2012

52

Quantum Hall effect in Bernal stacked and twisted bilayer graphene grown on Cu by chemical vapor deposition
Babak Fallahazad, Yufeng Hao, Kayoung Lee, Seyoung Kim, RS Ruoff, Emanuel Tutuc
Physical Review B, 2012

53

Scaling of Al2O3 dielectric for graphene field-effect transistors
Chiyui Ahn, Seyoung Kim, Tayfun Gokmen, Oliver Dial, Mark Ritter, H-S Philip Wong
VLSI Technology, Systems and Application (VLSI-TSA), Proceedings of Technical Program-2014 International Sympos, 2012

54

graphene field-effect transistors
B Fallahazad, K Lee, G Lian, S Kim, CM Corbet, DA Ferrer, L Colombo, E Tutuc
Applied Physics Letters, 2012

55

Temperature-dependent studies of the electrical properties and the conduction mechanism of HfOx-based RRAM
Seyoung Kim, Chiyui Ahn, Tayfun Gokmen, Oliver Dial, Mark Ritter
APS Meeting Abstracts, 2014

56

Resistive Switching and Temperature-dependent Transport in HfOx-based Resistive Memory Devices
Seyoung Kim, Tayfun Gokmen, Mark Ritter
APS Meeting Abstracts, 2015

57

Bio-Inspired Learning Demonstration with Synaptic Resistive Memory Devices
T Ando, E Cartier, P Jamison, A Pyzyna, S Kim, J Bruley, K Chung, H Shobha, I Estrada-Raygoza, H Tang, others
2016 IEEE International Electron Devices Meeting (IEDM), 2016

58

Analog CMOS-based resistive processing unit for deep neural network training
Seyoung Kim, Tayfun Gokmen, Hyung-Min Lee, Wilfried E Haensch
2017 IEEE 60th International Midwest Symposium on Circuits and Systems (MWSCAS), 2017

59

CMOS compatible MIM decoupling capacitor with reliable sub-nm EOT high-k stacks for the 7 nm node and beyond
S. Bae, X. Zhou, S. Kim, Y. Lee, S. Cruz, Y. Kim, J. B. Hannon, Y. Yang, D. K. Sadana, F. M. Ross, H. Park, J. Kim
Proceedings of the National Academy of Sciences of the United States of America, 2017

60

Pulse Characterization of HfOx-Based RRAM for Resistive Processing Unit Application
R. M. Shelby, A. Sebastian, S. Kim, S. Kim, S. Sidler, K. Virwani, M. Ishii, P. Narayanan, A. Fumarola, L. L. Sanches, I. Boybat, M. Le Gallo, K. Moon, J. Woo, H. Hwang, Y. Leblebici
Advances in Physics: X, 2017