Characteristics of the Series Resistance Extracted From Si Nanowire FETs Using the Y-Function Technique
Chang-Ki Baek
IEEE TRANSACTIONS ON NANOTECHNOLOGY, 201003
102
A Comparative Study of the DRAM Leakage Mechanism for Planar and Recessed Channel MOSFETs
Chang-Ki Baek
SOLID-STATE ELECTRONICS, 200909
103
Characterization of Near-Interface Oxide Trap Density in Nitrided Oxides for Nano-Scale MOSFET Applications
Chang-Ki Baek
IEEE TRANSACTIONS ON NANOTECHNOLOGY, 200909
104
Three-dimensional Simulation of Dopant Fluctuation Induced Threshold Voltage Dispersion in Non-planar MOS Structures Targeting Flash EEPROM Transistors
Chang-Ki Baek
IEEE TRANSACTIONS ON ELECTRON DEVICES, 200806
105
A Proposal on an Optimized Device Structure With Experimental Studies on Recent Devices for the DRAM Cell Transistor
Chang-Ki Baek
IEEE TRANSACTIONS ON ELECTRON DEVICES, 200712
106
Edge Profile Effect of Tunnel Oxide on Erase Threshold Voltage Distributions in Flash Memory Cells
Chang-Ki Baek
IEEE TRANSACTIONS ON ELECTRON DEVICES, 200612
107
Reliable Extraction of Cycling Induced Interface States Implementing Realistic P/E Stresses in Reference Cell: Comparison with Flash Memory Cell
Chang-Ki Baek
IEEE ELECTRON DEVICE LETTERS, 200603
108
Design Technique for Ramped Gate Soft-Programming in Over-Erased NOR Type Flash EEPROM Cells
Chang-Ki Baek
JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, 200501
109
Simple Experimental Determination of the Spread of Trapped Hot Holes Injected in Silicon-Oxide-Nitride-Oxide-Silicon (SONOS) Cells: Optimized Erase and Cell Shrinkage
Chang-Ki Baek
JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, 200412
110
Spatial and Temporal Characterization of Programming Charge in SONOS Memory Cell: Effects of Localized Electron Trapping
Chang-Ki Baek
JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, 200412