Study on a Scaling Length Model for Tapered Tri-gate FinFET based on 3-D Simulation and Analytical Analysis
Chang-Ki Baek
IEEE TRANSACTIONS ON ELECTRON DEVICES, 201309
82
Improved Electrical Characteristics of Honeycomb-Nanowire ISFETs
Chang-Ki Baek
IEEE ELECTRON DEVICE LETTERS, 201308
83
Simple Source/Drain Series Resistance Extraction Method Optimized for Nanowire
Chang-Ki Baek
IEEE ELECTRON DEVICE LETTERS, 201307
84
Analytic Model of S/D Series Resistance in Trigate FinFETs with Polygonal Epitaxy
Chang-Ki Baek
IEEE TRANSACTIONS ON ELECTRON DEVICES, 201304
85
Investigation of the electrical stability of Si-nanowire biologically sensitive field-effect transistors with embedded Ag/AgCl pseudo reference electrode
Chang-Ki Baek
RSC Advances, 201303
86
Improved performance of In2Se3 nanowire phase-change memory with SiO2 passivation
Chang-Ki Baek
Solid-State Electronics, 201302
87
Characterization of Channel Diameter Dependent Low Frequency Noise in Silicon Nanowire Field Effect Transistors
Chang-Ki Baek
IEEE ELECTRON DEVICE LETTERS, 201210
88
Device Design Guidelines for Nanoscale FinFETs in RF/Analog Applications
Chang-Ki Baek
IEEE ELECTRON DEVICE LETTERS, 201209
89
Characteristics of gate-all-around silicon nanowire field effect transistors with asymmetric channel width and source/drain doping concentration
Chang-Ki Baek
JOURNAL OF APPLIED PHYSICS, 201208
90
Electrical characteristics of 20-nm junctionless Si nanowire transistors