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21
Electrical characteristics of amorphous indium-tin-gallium-zinc-oxide TFTs under positive gate bias stress
Donghyun Kim, Kyoungah Cho, Sola Woo, Sangsig Kim*
Electronics Letters, 2020
22
Transposable 3T-SRAM synaptic array using independent double-gate feedback field-effect transistors
Sola Woo, Jinsun Cho, Doohyeok Lim, Kyoungah Cho, Sangsig Kim*
IEEE Transactions on Electron Devices, 2019
23
Nonvolatile and Volatile Memory Characteristics of a Silicon Nanowire Feedback Field-Effect Transistor With a Nitride Charge-Storage Layer
Hyungu Kang, Jinsun Cho, Yoonjoong Kim, Doohyeok Lim, Sola Woo, Kyoungah Cho, Sangsig Kim*
IEEE Transactions on Electron Devices, 2019
24
Static Random Access Memory Characteristics of Single-Gated Feedback Field-Effect Transistors
Jinsun Cho, Doohyeok Lim, Sola Woo, Kyoungah Cho, Sangsig Kim*
IEEE Transactions on Electron Devices, 2018
25
Covered Source-Channel Tunnel Field-Effect Transistors With Trench Gate Structures
Sola Woo, Sangsig Kim*
IEEE Transactions on Nanotechnology, 2018
26
Switchable-Memory Operation of Silicon Nanowire Transistor
Yoonjoong Kim, Jinsun Cho, Doohyeok Lim, Sola Woo, Kyoungah Cho, Sangsig Kim*
Advanced Electronic Materials, 2018
27
Bending-strain-induced localized density of states in amorphous indium-gallium-zinc-oxide thin-film transistors
Sola Woo, Minsuk Kim, Hyungon Oh, Kyoungah Cho, Sangsig Kim*
Superlattices and Microstructures, 2018
28
A SPICE model of silicon tunneling field-effect transistors
Sola Woo, Minsuk Kim, Sangsig Kim*
Microelectronic Engineering, 2018
29
Performance of ring oscillators composed of gate-all-around FETs with varying numbers of nanowire channels using TCAD simulation
Sutae Kim, Minsuk Kim, Sola Woo, Hyungu Kang, Sangsig Kim*
Current Applied Physics, 2018
30
Suppression of threshold voltage variability in MOSFETs by adjustment of ion implantation parameters
Jaehyun Park, Taesik Jang, Minsuk Kim, Sola Woo, Sangsig Kim*
Superlattices and Microstructures, 2018
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