발행물
컨퍼런스
Nano Korea
2021
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Theoretical study for β-Ga2O3 based MODFET using coupled drift-diffusion and multi-subband Boltzmann transport equation solver
Automated extraction and classification of region graphs for semiconductor device structure files
Compound Semiconductor Week (CSW)
High-field mobility modeling for gallium oxide based 2DEG channel in modulation doped heterostructure
Materials Challenges for Memory
Effects of the electrode materials and operating environment on magnesimum fluoride based bipolar RRAMs
Influence of buffer layer thickness on the performance of HfOx-based RRAM at vacuum environment