발행물
컨퍼런스
AWAD
2017
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Phonon-limited mobility of two-dimensional electron gas in AlInGaN/GaN heterostructures
Drift-diffusion model coupled with Maxwell's equations and its application to high frequency semiconductor devices
First-principles study on electronic structure of Si/SiO2 interface - Effect of defect position
CSW
Improved ohmic contact by pre-annealing process in quaternary In0.04Al0.65Ga0.31N/GaN HEMTs
Quaternary In0.04Al0.55Ga0.41N/GaN HEMTs with In0.1Ga0.9N back barrier