,

An efficient method for subband calculation of nanowire transistors using a coordinate transformation

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Mobility calculation for GaN based heterostructure: Effects of variational wave function and screening

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Improved Ohmic Contact by pre-Metallization Annealing Process in Quaternary In0.04Al0.65Ga0.31N/GaN HEMTs

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Drift-diffusion model coupled with Maxwell`s equations and its application to high frequency semiconductor devices

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First-principles study on electronic structure of Si/SiO2 interface - Effect of defect position