발행물
컨퍼런스
Asia-Pacific Workshop on Fundamentals and Applications of Advanced Semiconductor Devices
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Self-consistent calculation of electron mobility in Si, Ge, and In0.53Ga0.47As inversion layers
Phonon-limited mobility of two-dimensional electron gas in AlInGaN/GaN heterostructures
44th International Symposium on Compound Semiconductors (ISCS)
Quaternary In0.04Al0.55Ga0.41N/GaN HEMTs with In0.1Ga0.9N back barrier
Compound Semiconductor Week
Improved ohmic contact by pre-annealing process in quaternary In0.04Al0.65Ga0.31N/GaN HEMTs
한국반도체학술대회
Simulation of steady-state and small-signal characteristics of multi source-drain MOSFET