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Memory characteristics of capacitorless 2T DRAM cell composed of amorphous indium-tin-gallium-zinc oxide TFTs

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Electrical characteristics of amorphous indium-tin-gallium-zinc oxide thin-film transistors with bilayer channels

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Reconfigurable Characteristics of p+-n-i-p-n+ Silicon Nanowire Field-effect Transistors with Single-gated Structure

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Junction Doping Gradient Induced Variability in Gate-all-around Feedback Field-effect Transistor

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Capacitorless 1T-DRAM comprising poly-silicon feedback field-effect transistor