발행물
컨퍼런스
The 7th International Conference on Advanced Electromaterials
,
Memory characteristics of capacitorless 2T DRAM cell composed of amorphous indium-tin-gallium-zinc oxide TFTs
Electrical characteristics of amorphous indium-tin-gallium-zinc oxide thin-film transistors with bilayer channels
Reconfigurable Characteristics of p+-n-i-p-n+ Silicon Nanowire Field-effect Transistors with Single-gated Structure
Junction Doping Gradient Induced Variability in Gate-all-around Feedback Field-effect Transistor
Capacitorless 1T-DRAM comprising poly-silicon feedback field-effect transistor