NOR logic function of a bendable combination of tunneling field-effect transistors with silicon nanowire channels
NANO RESEARCH, 2016
252
Effect of deposition pressure on the electrical properties of nitrogen-doped amorphous carbon films
김상식, 김상식
JOURNAL OF THE KOREAN PHYSICAL SOCIETY, 2015
253
Subthreshold swing characteristics of nanowire tunneling FETs with variation in gate coverage and channel diameter
김상식, 김상식
CURRENT APPLIED PHYSICS, 2015
254
칼코제나이드 나노입자와 유리섬유를 이용하여 제작된열전모듈의 발전 특성
김상식
전기전자재료학회논문지, 2015
255
전기방사로 제작된 산화물 나노사 열전 pn 커플의 제작 및 특성
김상식
전기전자재료학회논문지, 2015
256
Role of metal capping layer on highly enhanced electrical performance of In-free Si-Zn-Sn-O thin film transistor
김상식, 김상식
THIN SOLID FILMS, 2015
257
Annealing Effect of Al2O3 Tunnel Barriers in HfO2-Based ReRAM Devices on Nonlinear Resistive Switching Characteristics
김상식, 김상식
JOURNAL OF NANOSCIENCE AND NANOTECHNOLOGY, 2015
258
Flexible silicon nanowire low-power ring oscillator featuring one-volt operation
김상식, 김상식
MICROELECTRONIC ENGINEERING, 2015
259
Steep Subthreshold Swing n- and p-Channel Operation of Bendable Feedback Field-Effect Transistors with p(+)-i-n(+) Nanowires by Dual-Top-Gate Voltage Modulation
김상식, 김상식
NANO LETTERS, 2015
260
Impact-Ionization and Tunneling FET Characteristics of Dual-Functional Devices With Partially Covered Intrinsic Regions