나노트로닉스 연구실
고려대학교 전기전자컴퓨터공학과
김상식 교수
누설전류
소비전력
tunneling field-effect transistor
스위칭전자소자
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전체 논문
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351
Strain-Dependent Characteristics of Triangular Silicon Nanowire-Based Field-Effect Transistors on Flexible Plastics
Koo, J (Koo, Jamin), Jeon, Y (Jeon, Youngin), Lee, M (Lee, Myeongwon), Kim, S (Kim, Sangsig)
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS, 2011
352
Low-temperature crystallization and electrical properties of BST thin films using excimer laser annealing
강민규, 김상식, 강종윤
CURRENT APPLIED PHYSICS, 2011
353
Electrically driven lasing in light-emitting devices composed of n-ZnO and p-Si nanowires
Kim, K (Kim, Kwangeun), Moon, T (Moon, Taeho), Kim, J (Kim, Jeongyong), Kim, S (Kim, Sangsig)
NANOTECHNOLOGY, 2011
354
Electrical Characteristics of GaAs Nanowire-Based MESFETs on Flexible Plastics
Yoon, C (Yoon, Changjoon), Cho, G (Cho, Gyoujin), Kim, S (Kim, Sangsig)
IEEE TRANSACTIONS ON ELECTRON DEVICES, 2011
355
Top-Down Fabrication of Fully CMOS-Compatible Silicon Nanowire Arrays and Their Integration into CMOS Inverters on Plastic
Lee, M (Lee, Myeongwon), Jeon, Y (Jeon, Youngin), Moon, T (Moon, Taeho), Kim, S (Kim, Sangsig)
ACS NANO, 2011
356
Leakage current mechanisms in sub-50 nm recess-channel-type DRAM cell transistors with three-terminal gate-controlled diodes
정은애, 김상식, 김영필, 남갑진, 이성삼, 민지영, 신유균, 최시영, 진교영, 문주태
SOLID-STATE ELECTRONICS, 2011
357
Fabrication of Nanometer-Scale Carbon Nanotube Field-Effect Transistors on Flexible and Transparent Substrate
김태근, 황종승, 강정민, 김상식, 황성우
JOURNAL OF NANOSCIENCE AND NANOTECHNOLOGY, 2011
358
Strain Effects on Optoelectronic Characteristics of Laterally Arrayed Silicon Nanowires on a Flexible Substrate
최진용, 조경아, 김상식
JAPANESE JOURNAL OF APPLIED PHYSICS Volume: 50 Issue: 1, 2011
359
Nano-Floating Gate Memory Devices Composed of ZnO Thin-Film Transistors on Flexible Plastics
박병준, 조경아, 김상식
NANOSCALE RESEARCH LETTERS, 2011
360
Spatial Distribution of Interface Traps in Sub-50-nm Recess-Channel-Type DRAM Cell Transistors
Chung EA (Chung, Eun-Ae), Jin G (Jin, Gyoyoung), Moon JT (Moon, Joo-Tae), Kim S (Kim, Sangsig), Kim YP (Kim, Young-Pil), Park MC (Park, Min-Chul), Nam KJ (Nam, Kab-Jin), Lee SS (Lee, Sung-Sam), Min JY (Min, Ji-Young), Yang G (Yang, Giyoung)
IEEE ELECTRON DEVICE LETTERS, 2011