나노트로닉스 연구실
고려대학교 전기전자컴퓨터공학과
김상식 교수
누설전류
소비전력
tunneling field-effect transistor
스위칭전자소자
무기물 반도체
발행물
주요 논문
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전체 논문
525
511
Effect of growth temperature on the properties of p-type GaN grown by plasma-assisted molecular beam epitaxy
김상식
JOURNAL OF CRYSTAL GROWTH, 1997
512
Trap-mediated excitation of Er3+ photoluminescence in Er-implanted GaN
Kim, S (Kim, S), Rhee, SJ (Rhee, SJ), Turnbull, DA (Turnbull, DA), Li, X (Li, X), Coleman, JJ (Coleman, JJ), Bishop, SG (Bishop, SG), Klein, PB (Klein, PB)
APPLIED PHYSICS LETTERS, 1997
513
Observation of multiple Er3+ sites in Er-implanted GaN by site-selective photoluminescence excitation spectroscopy
Kim, S (Kim, S), Rhee, SJ (Rhee, SJ), Turnbull, DA (Turnbull, DA), Li, X (Li, X), Coleman, JJ (Coleman, JJ), Bishop, SG (Bishop, SG), Reuter, EE (Reuter, EE)
APPLIED PHYSICS LETTERS, 1997
514
Isoelectronic bound-exciton photoluminescence in strained beryllium-doped Si0.92Ge0.08 epilayers and Si0.92Ge0.08/Si superlattices at ambient and elevated hydrostatic pressure
Kim, S (Kim, S), Chang, GL (Chang, GL), Herman, IP (Herman, IP), Bevk, J (Bevk, J), Moore, KL (Moore, KL), Hall, DG (Hall, DG)
PHYSICAL REVIEW B, 1997
515
Optical characteristics of p-type GaN films grown by plasma-assisted molecular beam epitaxy
Myoung, JM (Myoung, JM), Shim, KH (Shim, KH), Kim, C (Kim, C), Gluschenkov, O (Gluschenkov,, Kim, K (Kim, K), Kim, S (Kim, S), Turnbull, DA (Turnbull, DA), Bishop, SG (Bishop, SG)
APPLIED PHYSICS LETTERS, 1996
516
Pattern transfer and photoluminescence damage assessment of deep-submicrometer features etched by photon-induced cryoetching
Freiler, MB (Freiler, MB), Shih, MC (Shih, MC), Kim, S (Kim, S), Levy, M (Levy, M), Herman, IP (Herman, IP), Scarmozzino, R (Scarmozzino,, Osgood, RM (Osgood, RM)
APPLIED PHYSICS A-MATERIALS SCIENCE PROCESSING, 1996
517
Hydrostatic pressure dependence of isoelectronic bound excitons in beryllium-doped silicon
Kim, S (Kim, S), Herman, IP (Herman, IP), Moore, KL (Moore, KL), Hall, DG (Hall, DG), Bevk, J (Bevk, J)
PHYSICAL REVIEW B, 1996
518
Luminescence properties of submicron features fabricated by using magnetron reactive ion etching with different sample biases
Freiler, M (Freiler, M), McLane, GF (McLane, GF), Kim, S (Kim, S), Levy, M (Levy, M), Scarmozzino, R (Scarmozzino,, Herman, IP (Herman, IP), Osgood, RM (Osgood, RM)
APPLIED PHYSICS LETTERS, 1995
519
PHOTOLUMINESCENCE FROM WURTZITE GAN UNDER HYDROSTATIC-PRESSURE
KIM, SS (KIM, SS), DOVERSPIKE, K (DOVERSPIKE, K), HERMAN, IP (HERMAN, IP), TUCHMAN, JA (TUCHMAN, JA), ROWLAND, LB (ROWLAND, LB), GASKILL, DK (GASKILL, DK)
APPLIED PHYSICS LETTERS, 1995
520
PHOTOLUMINESCENCE OF ZNSE ZNMNSE SUPERLATTICES UNDER HYDROSTATIC-PRESSURE
TUCHMAN, JA (TUCHMAN, JA), SUI, ZF (SUI, ZF), KIM, SS (KIM, SS), HERMAN, IP (HERMAN, IP)
JOURNAL OF APPLIED PHYSICS, 1993