발행물
컨퍼런스
40th Micro and Nano Engineering(MNE)
2026.09
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Hysteresis reduction of multi-layer MoS2 field effect transistor by using atomic layer deposition Al2O3 as gate insulator
40th Micro and Nano Engineering (MNE)
Post-annealing effects on off-current of MoS2 Field Effect Transistor
Materials Research Society (MRS)
2025.04
Electrical and thermal stability multilayer MoS2 FET under negative bias stress
International Meeting on Information Display (IMID 2013)
2029.08
The correlation between electrical property of gate insulator and performance of the MoS2 FET
Influence of annealing process on MoS2 FET performance