발행물
컨퍼런스
2011 International Forum on Functional Materials
2011
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Growth and Characterization of periodically polarity inverted ZnO structures
9th International Conference on Nitride Semiconductors
Improved Material Properties of a-GaN on r-Sapphire with High Temperature GaN Multiple Buffer Layers by Metal-organic Chemical Vapor Deposition
Improved Crystal Quality of a-plane GaN on r-plane Sapphire by Controlled Integration of Silica Nano-Spheres into a-plane GaN Buffer Layers
Growth of a-plane GaN layer on annealed off-axis r-plane sapphire substrate by metal organic chemical vapor deposition
Improved Output Power of Nonpolar a-plane GaN Light Emitting