발행물
컨퍼런스
Int, Workshop on NitrideSemiconductors (IWNS) 2004
1970
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Surface roughness induced phase separation in InGaN and LED application
Int, Workshop on Nitride Semiconductors(IWNS) 2004
Surface texturing of p-GaN layer for efficient GaN LED by maskless selective etching
Int, Workshop on Nitride Semiconductors (IWNS) 2004
Highly transparent ZnO spreading layer for GaN based LED
제11회 한국반도체학술대회
Growth of AllnGaN/InGaN quantum wells for UV-LED application
The 31st Int. Symposium on Compound Semiconductors (ISCS)
Improvement of optical property of In0.05Ga0.95N/GaN UV LED with Mg gradient in p-GaN layer