1.55㎛ InGaAsP/InGaAsP 다중양자우물 구조전계흡수형 광변조기에서 캐리어 수송현상이 소광특성에 미치는 영향
심종인, 0
대한전자공학회지, 2000
202
S-parameter-Measurement-Based High-Speed Signal Transient Characterization of VLSI Interconnects on SiO2-Si Substrate
심종인, 0, 0
IEEE Transactions on Advanced Packaging, 2000
203
광모드변환기가 집적된 1.3㎛ SSC-FP-LD 제작 및 특성 해석
심종인, 0, 0
한국광학회지, 2000
204
Disordering Effects on PL Spectra of InGaAs/InGaAsP Quantum Wells
심종인, 0, 0
International Symposium on Optical Communications(ISOC), 2000
205
Fabrication and Analysis of 1.3㎛ Spot-Size-Converter Integrated Laser Diodes
심종인, 0, 0
International Symposium on Optical Communications(ISOC), 2000
206
모드변환기가 집적된 1.3㎛ FP-LD의 비대칭 광출력 특성
심종인, 0
한국광학회지, 2000
207
High power operations of 980nm In0.2Ga0.8As/GaxIn1-xAsyP1-y /Ga0.5In0.5P/GaAs pump lasers prepared by multi-step metalorganic vapor epitaxial growth with ion implanted chanels
Japanese Journal of Applied Physics, 1999
208
High power operations of 980nm Ga(0.8)In(0.2)As/Ga(x)In(1-x)As(y)P(1-y)/Ga(0.51)In(0.49)P/GaAs pump lasers prepared by multi-step metalorganic vapor epitaxial growth with ion implanted chanels
심종인, 0, 0, 0, 0, 0, 0, 0, 0, 0
Japanese Journal of Applied Physics, 1999
209
아날로그 통신용 1.55㎛ DFB-LD에서의 전류-광출력 특성의 구조의존성 해석
심종인, 0
공학기술논문지, 1999
210
A new polarization insensitive 1.55um InGaAs(P)/InGaAsP Multiple-Quantum-Well(MQW) Electro-absorption modulator using strain compensating layer