1.5μm GaInAsP / InP distributed reflector (DR) lasers with SCH structure

New λ / 4 phase-shift method by conversion of refractive index difference and application for 1.5μm GaInAsP / InP DFB laser

Properties of PECVD films for IC fabrication

Theoretical studies on in-plane polarization characteristics of (11(2)over-bar0) nonpolar InGaN/GaN quantum-well structures grown on InGaN substrates

Effect of Interface State Density of the AlGaN Electron Blocking Layer/GaN Barrier Layer in InGaN Blue Light-Emitting Diodes

Fabrication of Less Bowed Light-Emitting Diodes on Sapphire Substrates with a SiO2 Thin Film on Their Back Sides

Effects of the number of quantum wells on the performance of near-ultraviolet light-emitting diodes

Correlation between the efficiency droop and the blueshift of the electroluminescence in InGaN/GaN multiple-quantum-well blue light-emitting diodes

Determination of the effect of a strain relaxation layer on the internal electric field measurement in an InGaN/GaN multiple-quantum-well structure by using electroreflectance spectroscopy

Ohmic contacts of Pd/Zn/M(=Pd or Pt)/Au to p-type InP