Factors Determining the Carrier Distribution in InGaN/GaN Multiple-Quantum-Well Light-Emitting Diodes

Interactive Study of Electroreflectance and Photocurrent Spectra in InGaN/GaN-Based Blue LEDs

Carrier accumulation in the active region and its impact on the device performance of InGaN-based light-emitting diodes

Investigation of optical processes in InGaN-based light-emitting diodes using electroreflectance and photocurrent spectroscopies

Analysis of carrier recombination dynamics in InGaN-based light-emitting diodes by differential carrier lifetime measurement

Forward-Capacitance Measurement on Wide-Bandgap Light-Emitting Diodes

Wafer-Level Electroluminescence Metrology for InGaN Light-Emitting Diodes

Effects of unbalanced carrier injection on the performance characteristics of InGaN light-emitting diodes

On the ideality factor of the radiative recombination current in semiconductor light-emitting diodes

Influences of the p-GaN Growth Temperature on the Optoelectronic Performances of GaN-Based Blue Light-Emitting Diodes