Investigation of carrier spill-over in InGaN-based light-emitting diodes by temperature dependences of resonant photoluminescence and open-circuit voltage
심종인
PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE, 2013
62
Carrier density dependence of polarization switching characteristics of light emission in deep-ultraviolet AlGaN/AlN quantum well structures
심종인
APPLIED PHYSICS LETTERS, 2013
63
Investigation of Dominant Nonradiative Mechanisms as a Function of Current in InGaN/GaN Light-Emitting Diodes
심종인
APPLIED PHYSICS EXPRESS, 2013
64
Current, voltage and temperature distribution modeling of light-emitting diodes based on electrical and thermal circuit analysis
심종인
SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 2013
65
Investigation of Quantum-Well Shapes and Their Impacts on the Performance of InGaN/GaN Light-Emitting Diodes
심종인
JAPANESE JOURNAL OF APPLIED PHYSICS, 2013
66
Investigation of Light Extraction Efficiency in AlGaN Deep-Ultraviolet Light-Emitting Diodes
심종인
APPLIED PHYSICS EXPRESS, 2013
67
GaN계 청색 발광 다이오드에서 저전류 스트레스 후의 광 및 전기적 특성 변화
심종인
한국광학회지, 2012
68
Wurtzite GaN/AlGaN 공명 터넬 다이오드에서의 구조적 조건에 따른 투과 계수 특성연구
심종인
새물리, 2012
69
Time-resolved photoluminescence studies of the optical quality of InGaN/GaN multi-quantum well grown by MOCVD-antimony surfactant effect
심종인
SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 2012
70
Effects of polarization field on vertical transport in GaN/AlGaN resonant tunneling diodes