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Graphene and 2D materials for soft electronics

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Temporally Reconfigurable Reservoir Computing UsingUltrathin Flexible All-Solid-State Electrolyte-Gated TFT

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Wafer-scale Direct Growth of Nanocrystalline Boron Nitride for Memristor-based Physical Reservoirs

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Wide Reservoir Computing Using MoS2-based Charge Trap Memory for Enhanced Computing Capacity

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Physical Reservoirs Capable of Multi Time-scale Processing Implemented Using Direct-grown Bi2O2Se-based Memristors