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161
Dielectric characterization of metal-oxide-semiconductor capacitor using Ga2O3 dielectrics on p-Si(100)
INTEGRATED FERROELECTRICS, 200512
162
Thermoelastic effect induced by ferroelastic domain switching
APPLIED PHYSICS LETTERS, 200510
163
The formation of precipitates in the ZnCoO system
EUROPHYSICS LETTERS, 200510
164
Room temperature ferromagnetism in highly-resistive Ni-doped TiO2
APPLIED PHYSICS LETTERS, 200509
165
Growth of thick AlGaN by mixed-source hydride vapor phase epitaxy
Ahn H.S., Kim K.H., Yang M., Yi J.Y., Lee H.J., Cho C.R., Cho H.K., Kim S.W., Honda Y., Yamaguchi M., Sawaki N., Narita T.
Applied Surface Science, 200504
166
X-ray photoelectron spectroscopy study of magnetic tunnel junctions
JOURNAL OF APPLIED PHYSICS, 200502
167
Surface characterization of electrochemically fabricated CuO doped ZnO thin film
Yoon J.-H., Cho C.-R., Won M.-S., Shim Y.-B.
Key Engineering Materials, 2005
168
Growth and characterization of (Ba0.5Sr0.5)TiO3 films epitaxially grown on (002) GaN/(0006) Al2O3 electrode
JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 200411
169
Heteroepitaxial growth and ferroelectricity of Bi3.25La0.75Ti3O12 films on n-GaN/Al2O3(0001) substrates prepared by pulsed-laser deposition
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 200411
170
Ferromagnetism of heteroepitaxial Zn1-xCuxO films grown on n-GaN substrates
JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 200411
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