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31
Stable high conductive amorphous InGaZnO driven by hydrogenation using hot isostatic pressing
W.K.Kim, S.Lee, H.Koinuma, S.Y.Jeong, Y.C.Cho, J.M.Shin, C.R.Cho, J.S.Bae, T.Y.Kim, S.K.Park
Appl. Phys. Lett., 2011
32
Fabrication of the CuInGaSe pellet and characterization of the thin film
H.S.Jeon, A.R.Lee, G.S.Lee, D.W.Jo, J.E.Ok, K.H.Kim, M.Yang, S.N.Yi, H.S.Ahn, C.R.Cho, S.W.Kim, H.J.Ha
Jpn. J. Appl. Phys., 2011
33
Characterization of the InGaN/GaN multi-quantum-wells light-emitting diode grown on patterned sapphire substrate with wide electro- luminescence spectrum
A.R.Lee, H.Jeon, G.S.Lee, J.E.Ok, D.W.Jo, K.H.Kim, S.N.Yi, M.Yang, H.S.Ahn, C.R.Cho, S.W.Kim, J.H.Lee, H.J.Ha
Jpn. J. Appl. Phys., 2011
34
Physicochemical properties and enhanced cellular responses of biocompatible polymeric scaffolds treated with atmospheric pressure plasma using O2 gas
H.U.Lee, S.Y.Park, Y.H.Kang, S.Y.Jeong, S.H.Choi, Y.Y.Jahng, G.H.Chung, M.B.Kim, C.R.Cho
Materials Science & Engineering C, 2011
35
Chemical bonding states and ferroelectricity of Pb(Zr0.52Ti0.48)O3 thin film
C.R.Cho
Cryst. Res. & Technol, 2000
36
Etching behavior and damage recovery of SrBi2Ta2O9 thin films
W.J.Lee, C.R.Cho, S.H.Kim, I.K.You, B.W.Kim, B.G.Yu, C.H.Shin, H.C.Lee
Jpn. J. Appl. Phys., 1999
37
The effect of annealing temperature on electrical properties of SrBi2Ta2O9/ insulators/Si(MFIS) structure for NDRO- type FRAM device
B.G.Yu, W.J.Lee, C.R.Cho, C.H.Shin, B.W.Kim
Cryst. Res. Technol., 1999
38
Electrical properties of SrBi2Ta2O9/insulator/Si structures with various insulator
W.J.Lee, C.H.Shin, C.R.Cho, J.S.Ryu, B.W.Kim, K.I.Cho
Jpn. J. Appl. Phys., 1999
39
Dielectric and ferroelectric response as a function of annealing tempera- ture and film thick- ness of sol-gel deposited PZT film
C.R.Cho, W.J.Lee, B.G.Yu, B.W.Kim
J. Appl. Phys., 1999
40
Structural and ferroelectric properties of sol-gel derived Nb-doped Pb[(Sc1/2Nb1/2)0.57Ti0.43O3 thin films
C.R.Cho, W.J. Lee, B.G.Yu, B.W.Kim, K.B.Park
Jpn. J. Appl. Phys., 1999
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