A relaxor-ferroelectric PMN-PZT thin-film-based drop-on-demand printhead for bioprinting applications with high piezoelectricity and low heat dissipation (IF: 8.0; JCR: 0.7%)
Jin Soo Park†, Keun Young Huh†, Min-Seok Kim, Soo Young Jung, Jung Ho Park, Soo Jin Kim, Ho Won Jang, Kyeong Seob Hwang, Hong Nam Kim, Tae Geun Kim*, SeungHyub Baek*, Byung Chul Lee
2024
42
GeTe/MoTe2 Van der Waals Heterostructures: Enabling Ultralow Voltage Memristors for Nonvolatile Memory and Neuromorphic Computing Applications (IF: 13.3; JCR: 6.6%)
Atul C. Khot†, Kiran A. Nirmal, Tukaram D. Dongale, Tae Geun Kim*
2024
43
Phase Change Heterostructure Memory with Oxygen-Doped Sb2Te3 Layers for Improved Durability and Reliability through Nano crystalline Island Formation (IF: 13.3; JCR: 6.6%)
Dong Hyun Kim†, Seung Woo Park, Jun Young Choi, Ho Jin Lee, Jin Suk Oh, Jong Min Joo, Tae Geun Kim*
2024
44
Bio-inspired Photosensory Artificial Synapse Based on Functionalized Tellurium Multiropes for Neuromorphic Computing (IF: 13.3; JCR: 6.6%)
Adila Rani†, M Junaid Sultan, Wanqi Ren, Atanu Bag, Ho Jin Lee, Nae-Eung Lee, Tae Geun Kim*
2024
45
High-performance blue TADF OLED using two-step heat plasma-treated MoTe2 as a hole-injection layer (IF: 10.9; JCR: 1.9%)
Chenjie Yao†, Wanqi Ren†, Tejas Dhanalaxmi Raju, Ho Jin Lee, Atul C. Khot, Kiran A. Nirmal, Tae Geun Kim *
2024
46
Improved mobility and bias stability of Hf-doped IGZO/IZO/Hf-doped IGZO thin-film transistor (IF: 6.2; JCR: 9.5%)
Hwi Geun Kim†, Ho Jin Lee, Kang Min Lee, Tae Geun Kim*
2024
47
Understanding the correlation between the crystallization kinetics and defect formation in (FA)1.5Cs0.5AgBi(Cl0.75Br0.25)6 double perovskites (IF: 22.02; JCR: 3.6%)
Tejas Dhanalaxmi Raju†, Ho Jin Lee†, Vignesh Murugadoss, Pavan Kum, Wanqi Ren, Jang Hyuk Kwon, Tae Geun Kim*
Atul C. Khot†, Pravin S. Pawar†, Tukaram D. Dongale, Kiran A. Nirmal, Santosh S. Sutar, Deepthi Jayan K, Navaj B. Mullani, Dhananjay D. Kumbhar, Yong Tae Kim, Jun Hong Park, Jaeyeong Heo, Tae Geun Kim*
2024
49
Ultra-thin Vertical TFT Photosensor and Photosynapse Based on Au-Doped- Graphene under Transition Metal Selenide Reaction (IF: 10.9; JCR: 1.9%)
Kang Ting†, Adila Rani†, Wanqi Ren, M. Junaid Sultan, Nae-Eung Lee, Tae Geun Kim*
2024
50
Effect of Transition Metal Dichalcogenide Based Confinement Layers on the Performance of Phase-Change Heterostructure Memory