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61
Low-power read circuit with self-adjusted column pulse width for diode-switch resistive RAMs
민경식
IEICE ELECTRONICS EXPRESS, 200907
62
Negative charge pump circuit with large output current and high power efficiency
민경식
IEICE ELECTRONICS EXPRESS, 200903
63
Sub-1-V-Output CMOS bandgap reference circuit with small area and low power consumption
민경식
IEICE ELECTRONICS EXPRESS, 200902
64
Sence amplifier driving scheme with adaptive delay line for reducing peak current and driving time variations in deep-sub-micron DRAMs
민경식
IEICE ELEX, 200807
65
Comparative Study on Leakage Current of power-gated SRAMs for 65-nm, 45-nm, and 32-nm technology nodes
민경식
Journal of computers, 200803
66
A modified dickson charge pump circuit with high efficiency and high output voltage
민경식
IEICE Trans. Electronics, 200802
67
Sense amplifier driving scheme with adaptive delay line for reducing peak current and driving time variations in deep-sub-micron DRAMs
Kwon, OS, Kwon, YJ, Song, HJ, Min, KS
IEICE ELECTRONICS EXPRESS, 2008
68
A compact HSPICE macromodel of resistive RAM
민경식
IEICE Electronics Express, 200710
69
Fast-delay and low-power level shifter for low-voltage applications
민경식
IEICE Trans. Electronics, 200707
70
Leakage-suppressed clock-gating circuit with zigzag super cut-off CMOS (ZSCCMOS) for leakage-dominant sub-70-nm and sub-1-V-VDD LSIs
민경식
IEEE Trans. VLSI systems, 200604
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