발행물

전체 논문

124

61

Low-power read circuit with self-adjusted column pulse width for diode-switch resistive RAMs
민경식
IEICE ELECTRONICS EXPRESS, 200907

62

Negative charge pump circuit with large output current and high power efficiency
민경식
IEICE ELECTRONICS EXPRESS, 200903

63

Sub-1-V-Output CMOS bandgap reference circuit with small area and low power consumption
민경식
IEICE ELECTRONICS EXPRESS, 200902

64

Sence amplifier driving scheme with adaptive delay line for reducing peak current and driving time variations in deep-sub-micron DRAMs
민경식
IEICE ELEX, 200807

65

Comparative Study on Leakage Current of power-gated SRAMs for 65-nm, 45-nm, and 32-nm technology nodes
민경식
Journal of computers, 200803

66

A modified dickson charge pump circuit with high efficiency and high output voltage
민경식
IEICE Trans. Electronics, 200802

67

Sense amplifier driving scheme with adaptive delay line for reducing peak current and driving time variations in deep-sub-micron DRAMs
Kwon, OS, Kwon, YJ, Song, HJ, Min, KS
IEICE ELECTRONICS EXPRESS, 2008

68

A compact HSPICE macromodel of resistive RAM
민경식
IEICE Electronics Express, 200710

69

Fast-delay and low-power level shifter for low-voltage applications
민경식
IEICE Trans. Electronics, 200707

70

Leakage-suppressed clock-gating circuit with zigzag super cut-off CMOS (ZSCCMOS) for leakage-dominant sub-70-nm and sub-1-V-VDD LSIs
민경식
IEEE Trans. VLSI systems, 200604