발행물

전체 논문

275

181

Measurement of optical loss variation on thickness of InGaN optical confinement layers of blue-violet-emitting laser diodes
Son, JK[Son, J. K.], Lee, SN[Lee, S. N.], Paek, HS[Paek, H. S.], Sakong, T[Sakong, T.], Kim, HK[Kim, H. K.], Park, Y[Park, Y.], Ryu, HY[Ryu, H. Y.], Nam, OH[Nam, O. H.], Hwang, JS[Hwang, J. S.], Cho, YH[Cho, Yong-Hoon]
JOURNAL OF APPLIED PHYSICS, 2008

182

Quantum dot-based protein micro- and nanoarrays for detection of prostate cancer biomarkers
Gokarna, A, Jin, LH, Hwang, JS, Cho, YH[Cho, Yong-Hoon], Lim, YT, Chung, BH, Youn, SH, Choi, DS, Lim, JH
PROTEOMICS, 2008

183

White light emitting diodes realized by using an active packaging method with CdSe/ZnS quantum dots dispersed in photosensitive epoxy resins
Wang, H[Wang, Hao], Lee, KS[Lee, Kyu-Seung], Ryu, JH[Ryu, Jae-Hyoung], Hong, CH[Hong, Chang-Hee], Cho, YH[Cho, Yong-Hoon]
NANOTECHNOLOGY, 2008

184

Active packaging method for light-emitting diode lamps with photosensitive epoxy resins
Wang, H, Lee, KS, Ryu, JH, Hong, CH, Cho, YH[Cho, Yong-Hoon]
IEEE PHOTONICS TECHNOLOGY LETTERS, 2008

185

Optical investigation of p-type ZnO epilayers doped with different phosphorus concentrations by radio-frequency magnetron sputtering
Kwon, BJ, Kwack, HS, Lee, SK, Cho, YH[Cho, Yong-Hoon], Park, SJ
APPLIED PHYSICS LETTERS, 2007

186

Optical and structural properties of In0.5Ga0.5As quantum dots with different numbers of stacks grown by atomic layer molecular beam epitaxy: vertical realignment of weakly coupled quantum dots
Kwack, HS[Kwack, Ho-Sang], Kim, BO[Kim, Byoung-O], Cho, YH[Cho, Yong-Hoon], Song, JD[Song, Jin-Dong], Choi, WJ[Choi, Won-Jun], Lee, JI[Lee, Jung-Il]
NANOTECHNOLOGY, 2007

187

Comparative investigation of InGaN quantum well laser diode structures grown on freestanding GaN and sapphire substrates
Hwang, JS, Gokarna, A, Cho, YH[Cho, Yong-Hoon], Son, JK, Lee, SN, Sakong, T, Paek, HS, Nam, OH, Park, Y, Park, SH
JOURNAL OF APPLIED PHYSICS, 2007

188

Effect of symmetric and asymmetric In0.2Ga0.8As wells on the structural and optical properties of InAs quantum dots grown by migration enhanced molecular beam epitaxy for the application to a 1.3 mu m laser diode
Ryu, SP, Lee, YT, Cho, NK, Choi, WJ, Song, JD, Kwack, HS, Cho, YH[Cho, Yong-Hoon]
JOURNAL OF APPLIED PHYSICS, 2007

189

Direct comparison of optical characteristics of InGaN-based laser diode structures grown on pendeo epitaxial GaN and sapphire substrates
Hwang, JS, Gokarna, A, Cho, YH[Cho, Yong-Hoon], Son, JK, Sakong, T, Paek, HS, Nam, OH, Park, Y
APPLIED PHYSICS LETTERS, 2007

190

Comprehensive study of time-lapsed peak shift in InGaN quantum well structures: Discrimination of localization effect from internal field effect
Son, JK[Son, J. K.], Sakong, T[Sakong, T.], Lee, SN[Lee, S. N.], Paek, HS[Paek, H. S.], Ryu, H[Ryu, H.], Ha, KH[Ha, K. H.], Nam, O[Nam, O.], Park, Y[Park, Y.], Hwang, JS[Hwang, J. S.], Cho, YH[Cho, Yong-Hoon]
APPLIED PHYSICS LETTERS, 2007