발행물
컨퍼런스
10th International meeting on Information Display
2010
,
The Effects of Active Layer Thickness in Solution-processed HfInZnO TFTs
High Efficiency and Low Voltage Characteristics of Electrophosphorescent Devices with Mixed and Layered Emission Layer
International union of materials research societies-international conference on electronic materials 2010 (IUMRS-ICEM 2010)
Performance of Zr-doped ZTO thin film transistors fabricated by sol-gel process
Effect of Solution-Processed NiO Thin Film as a Hole Transport Layer in P3HT:PCBM Bulk Heterojunction Solar Cells
Role of strontium doping in solution-processed indium zinc oxide thin-film transistor