발행물
컨퍼런스
European Materials Research Society 2008
2008
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New structured amorphous-InGaZnO TFT without source/drain layer deposition
Pyrolysis behavior of poly(methylphenylsilane) prepared by rapid thermal annealing
The effect of thermal annealing sequence on amorphous InGaZnO thin film transistor by plasma treated source and drain structure
Fabrication and characterization of solution processed ZnO thin film transistor
The effect of SiOx buffer layer on GZO films deposited on PET substrate for flexible display