Low-thermal-budget (300?°C) ferroelectric TiN/Hf0.5Zr0.5O2/TiN capacitors realized using high-pressure annealing
Si Joon Kim, Yong Chan Jung, Jaidah Mohan, Hyo Jeong Kim, 노성민, 김민성, Jeong Gyu Yoo, Hye Ryeon Park, Heber Hernandez-Arriaga, Jin-Hyun Kim, 김형태, 최동현, 정주혜, Su Min Hwang, Harrison Sejoon Kim, 김현재, 김지영
APPLIED PHYSICS LETTERS, 2021