First-principles studies of the electronic and dielectric properties of Si/SiO2/HfO2 interfaces
Yongjin Park, Ki-jeong Kong, Hyunju Chang, Mincheol Shin
Japanese Journal of Applied Physics, 2013
52
Effects of Suboxide Layers on the Electronic Properties of Si(100)/SiO2 Interfaces: Atomistic Multi-scale Approach
Byung-Hyun Kim, Gyubong Kim, Kihoon Park, Mincheol Shin, Yong-Chae Chung, Kwang-Ryeol Lee
Journal of Applied Physics,
53
SiO2 Interfaces: Atomistic Multi-scale Approach
Byung-Hyun Kim, Gyubong Kim, Kihoon Park, Mincheol Shin, Yong-Chae Chung, Kwang-Ryeol Lee
Journal of Applied Physics, 2013
54
Low-power, low-phase-noise tuned-input tuned-output VCO with loop gain enhancement
Q.D. Bui, H.S. Choi, I.Y. Oh, M. Shin, C.S. Park
Electronics Letters, 2012
55
Feasibility, Accuracy and Performance of Contact Block Reduction method for multi-band simulations of ballistic quantum transport
Hoon Ryu, Hong-Hyun Park, Mincheol Shin, Dragica Vasileska, Gerhard Klimeck
Journal of Applied Physics, 2012
56
Phonon transport in Si nanowires with elastically dissimilar barriers
J. H. Oh, M. G. Jang, M. Shin, S. -H. Lee
Applied Physics Letters, 2012
57
Phonon thermal conductivity in silicon nanowires: the effects of surface roughness at low temperature
J. H. Oh, M. Shin, M. G. Jang
Journal of Applied Physics, 2012
58
Intrinsic reduction of ballistic hole current due to quantum mechanical coupling of heavy and light holes in p-type Si nanowire field effect transistors
Mincheol Shin
Applied Physics Letters, 2011
59
First- and second-order crossover of the escape rate for the biaxial spin model with eld applied along the hard at the resonance
Doo-hyung Kang, Mincheol Shin, Gwang-Hee Kim
Journal of Korean Physical Society, 2011
60
Quantum-classical crossover of the escape rate in the biaxial nanomagnets with a higher order symmetry