주요 논문
3
*2026년 기준 최근 6년 이내 논문에 한해 Impact Factor가 표기됩니다.
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article
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인용수 0
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2025Cache-PIM: An ECC-Compatible eDRAM Processing-in-Memory for Last-Level Cache With Triple-Level Error Correction
Sangwoo Ha, Soyeon Um, Sangjin Kim, Kyomin Sohn, Hoi‐Jun Yoo
IEEE Journal of Solid-State Circuits
This article presents cache-processing-in-memory (PIM), an error correction code (ECC)-compatible embedded dynamic random access memory (eDRAM) PIM-based last-level cache (LLC) with a novel triple-level error correction. Integrating PIM into the cache system causes the existing ECC to become a performance bottleneck, leading to higher latency and decreased computational accuracy. An ECC-compatible eDRAM-PIM enables reliable in-memory computing (IMC) even in less stable DRAM environments while reducing ECC latency for PIM tasks. Cache-PIM proposes three key features: 1) triggered error correction with concurrent error detection (TECCED) reduces cell error correction latency for PIM tasks; 2) adaptive error canceling (AEC) corrects computation errors; and 3) resolution-aware single-cycle voting (RSV) reduces analog-to-digital converter (ADC) readout error. Cache-PIM is fabricated in 28-nm CMOS technology and occupies 0.66-mm<sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sup> die area. A demonstration of ViT-Base on the ImageNet dataset achieves 61% latency reduction compared to the conventional ECC and 77.1% accuracy.
https://doi.org/10.1109/jssc.2025.3568485
Computer science
Cache
Parallel computing
Embedded system
2
article
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bronze
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인용수 0·
2025Heart Lung Transplantation for Fibrosing Mediastinitis
S.P. Narasimmal, Seung Hwan Han, Alexander Yuen, K. Nathan Sankar, Milind Y. Desai, M. Leira, Hoi‐Jun Yoo, Dominick Megna, P. Catarino, Jeremy Falk, R. Rampolla
The Journal of Heart and Lung Transplantation
https://doi.org/10.1016/j.healun.2025.02.1583
Lung transplantation
Medicine
Mediastinitis
Lung
Heart-Lung Transplantation
Transplantation
Cardiology
Internal medicine
Surgery
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인용수 2
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2025Dyamond: Compact and Efficient 1T1C DRAM IMC Accelerator With Bit Column Addition for Memory-Intensive AI
Seongyon Hong, Wooyoung Jo, Sangjin Kim, Sangyeob Kim, Soyeon Um, Kyomin Sohn, Hoi‐Jun Yoo
IEEE Journal of Solid-State Circuits
This article proposes Dyamond, a one transistor, one capacitor (1T1C) dynamic random access memory (DRAM) in-memory computing (IMC) accelerator with architecture-to-circuit-level optimizations for high memory density and energy efficiency. The bit column addition (BCA) dataflow introduces output bit-wise accumulation to exploit varying accuracy and energy characteristics across different bit positions. The lower BCA (LBCA) reduces analog-to-digital converter (ADC) operations to enhance energy efficiency with inter-column analog accumulation. The higher BCA (HBCA) improves accuracy through signal enhancement and minimizes energy consumption per ADC readout with signal shift (SS). The design maximizes memory density by dedicating 1T1C cells solely to memory and integrating a compact computation circuit adjacent to the bitline sense amplifier. The memory access power is further reduced with a big-little array structure and a switchable sense amplifier (SWSA), which trades off retention time and energy consumption. Fabricated in 28-nm CMOS, Dyamond integrates 3.54-MB DRAM in a 6.48-mm2 area, achieving 27.2 TOPS/W peak efficiency and outstanding performance in advanced models such as BERT and GPT-2.
https://doi.org/10.1109/jssc.2025.3538899
Dram
Column (typography)
Bit (key)
Computer science
Parallel computing
Embedded system
Computer hardware
Computer architecture
Telecommunications
Computer network