발행물
컨퍼런스
2018 Symposia on VLSI Technology and Circuits.
2018
,
Te-Based Binary OTS Selectors with Excellent Selectivity (>105), Endurance (>108) and Thermal Stability (>450 °C)
2017 IEEE International Electron Devices Meeting (IEDM)
2017
NbO2 based threshold switch device with high operating temperature (>85°C) for steep-slope MOSFET (~2mV/dec) with ultra-low voltage operation and improved delay time
Non-Volatile Memory Technology Symposium 2017(NVMTS 2017)
Study on Insulator - metal transition characteristics of NbO2 for selector device
2016 IEEE International Electron Devices Meeting (2016 IEDM)
2016
Monolithic Integration of AgTe/TiO 2 based Threshold Switching Device with TiN liner for Steep Slope Field-Effect Transistors
Excellent threshold switching device (I OFF ~ 1 pA) with atom-scale metal filament for steep slope (< 5 mV/dec), ultra low voltage (V DD = 0.25 V) FET applications